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ZXTN4004KQ PDF预览

ZXTN4004KQ

更新时间: 2023-09-24 09:17:43
品牌 Logo 应用领域
美台 - DIODES 晶体管功率双极晶体管
页数 文件大小 规格书
5页 185K
描述
NPN, 150V, 1A, TO252

ZXTN4004KQ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:15 weeks风险等级:5.69
其他特性:HIGH RELIABILITY外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

ZXTN4004KQ 数据手册

 浏览型号ZXTN4004KQ的Datasheet PDF文件第1页浏览型号ZXTN4004KQ的Datasheet PDF文件第2页浏览型号ZXTN4004KQ的Datasheet PDF文件第4页浏览型号ZXTN4004KQ的Datasheet PDF文件第5页 
A Product Line of  
Diodes Incorporated  
ZXTN4004K  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Emitter Breakdown Voltage (Note 6)  
Collector Cut-off Current  
Symbol  
BVCEO  
ICBO  
Min  
150  
Typ  
175  
Max  
-
Unit  
V
Test Condition  
IC = 10mA  
-
-
-
-
50  
50  
nA  
nA  
VCB = 150V  
Emitter Cut-off Current  
IEBO  
VEB = 7V  
IC = 85mA, VCE = 0.20V  
IC = 150mA, VCE = 0.25V  
IC = 150mA, VCE = 0.25V  
60  
100  
-
-
-
-
Static Forward Current Transfer Ratio (Note 6)  
-
hFE  
Base-Emitter Turn-On Voltage (Note 6)  
-
-
-
-
-
-
-
0.71  
512  
426  
3413  
321  
65  
0.95  
V
VBE(on)  
t(d)  
Delay Time  
Rise Time  
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
t(r)  
V
CC = 120V, IC = 150mA,  
Storage Time  
Fall Time  
-IB2 = 1.5mA, VCE ON) = 0.25V  
(
t(s)  
t(f)  
Storage Time  
Fall Time  
t(s)  
V
CC = 120V, IC = 150mA,  
294  
-IB2 = 1.5mA, VCE ON) = 4V  
(
t(f)  
Notes:  
6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%  
Typical Characteristics  
1.0  
-55°C  
VCE=0.25V  
125°C  
700  
VCE=0.25V  
25°C  
600  
85°C  
500  
0.8  
0.6  
0.4  
0.2  
400  
25°C  
300  
125°C  
200  
100  
0
-55°C  
85°C  
100µ  
1m  
10m  
100m  
1
100µ  
1m  
10m  
100m  
1
IC Collector Current (A)  
IC Collector Current (A)  
hFE v IC  
VBE(on) v IC  
30  
25  
20  
15  
10  
5
f = 1MHz  
Cobo  
0
100m  
1
10  
100  
Voltage(V)  
Capacitance v Voltage  
3 of 5  
www.diodes.com  
December 2011  
© Diodes Incorporated  
ZXTN4004K  
Document Number: DS35458 Rev: 1 - 2  

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