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ZXTN19055DZ PDF预览

ZXTN19055DZ

更新时间: 2024-09-15 12:20:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 396K
描述
55V, SOT89, NPN medium power transistor

ZXTN19055DZ 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliant风险等级:5.06
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

ZXTN19055DZ 数据手册

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ZXTN19055DZ  
55V, SOT89, NPN medium power transistor  
Summary  
BV  
BV  
> 150V  
> 55V  
= 6A  
CEX  
CEO  
I
C(cont)  
V
< 60mV @ 1A  
CE(sat)  
CE(sat)  
R
= 28m  
P
= 2.1W  
D
Description  
C
E
Packaged in the SOT89 outline this low saturation 55V NPN transistor  
offers extremely low on state losses making it ideal for use in DC-DC  
circuits and various driving and power management functions.  
B
Feature  
Extremely low equivalent on-resistance of 28m⍀  
6 Amps continuous current  
Up to 10 amps peak current  
Very low saturation voltages  
E
C
B
Excellent h characteristics up to 10 amps  
FE  
150V Forward blocking voltage  
C
Applications  
Emergency lighting circuits  
Motor driving (including DC fans)  
Solenoid, relay and actuator drivers  
DC modules  
Pinout - top view  
Backlight inverters  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity per reel  
ZXTN19055DZTA  
7
12  
1000  
Device marking  
S75  
Issue 1 - June 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  

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