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ZXT13N20DE6TA PDF预览

ZXT13N20DE6TA

更新时间: 2024-10-14 07:42:27
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管
页数 文件大小 规格书
6页 434K
描述
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXT13N20DE6TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SOT-23, 6 PIN针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.22最大集电极电流 (IC):4.5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1.7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):96 MHzBase Number Matches:1

ZXT13N20DE6TA 数据手册

 浏览型号ZXT13N20DE6TA的Datasheet PDF文件第2页浏览型号ZXT13N20DE6TA的Datasheet PDF文件第3页浏览型号ZXT13N20DE6TA的Datasheet PDF文件第4页浏览型号ZXT13N20DE6TA的Datasheet PDF文件第5页浏览型号ZXT13N20DE6TA的Datasheet PDF文件第6页 
ZXT13N20DE6  
SuperSOT4™  
20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=20V; RSAT = 38m ; IC= 4.5A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
SOT23-6  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 15A  
IC=4.5A Continuous Collector Current  
SOT23-6 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Power switches  
Motor control  
C
C
B
C
C
E
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
ZXT13N20DE6TA  
ZXT13N20DE6TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
Top View  
13  
DEVICE MARKING  
N20D  
ISSUE 1 - DECEMBER 1999  
1

ZXT13N20DE6TA 替代型号

型号 品牌 替代类型 描述 数据表
ZXT13N20DE6TA DIODES

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20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

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