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ZXMP2120E5 PDF预览

ZXMP2120E5

更新时间: 2024-11-21 03:14:07
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
6页 383K
描述
200V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP2120E5 数据手册

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ZXMP2120E5  
200V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA  
DESCRIPTION  
This 200V enhancement mode P-channel MOSFET provides users with a  
competitive specification offering efficient power handling capability, high  
impedance and is free from thermal runaway and thermally induced  
secondary breakdown. Applications benefiting from this device include a  
variety of Telecom and general high voltage circuits.  
A 4 pin SOT223 version is also available (ZXMP2120G4).  
SOT23-5  
FEATURES  
High voltage  
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
SOT23-5 package variant engineered to increase spacing between  
high voltage pins.  
APPLICATIONS  
Active clamping of primary side MOSFETs in 48 volt DC-DC converters  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
S
N/C  
D
ZXMP2120E5TA  
7
8mm embossed  
3,000 units  
N/C  
G
DEVICE MARKING  
P120  
PINOUT - TOP VIEW  
ISSUE 2 - SEPTEMBER 2006  
1

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