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ZXMP2120FFTA PDF预览

ZXMP2120FFTA

更新时间: 2024-10-30 03:14:07
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
10页 411K
描述
200V SOT23F P-channel enhancement mode MOSFET

ZXMP2120FFTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-23F, 3 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.26配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.137 A
最大漏源导通电阻:28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):7 pFJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMP2120FFTA 数据手册

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ZXMP2120FF  
200V SOT23F P-channel enhancement mode MOSFET  
Summary  
V
R
()  
I (mA)  
(BR)DSS  
DS  
D
(on)  
28 @ V = -10V  
-200  
-137  
GS  
Description  
This 200V enhancement mode P-channel MOSFET provides users with  
a competitive specification offering efficient power handling capability,  
high impedance and freedom from thermal runaway and thermally  
induced secondary breakdown.  
Applications benefiting from this device include a variety of telecom  
and general high voltage circuits.  
Features  
D
S
High voltage  
G
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
SOT23 FLAT package  
Applications  
Active clamping of primary side MOSFETs in 48 volt DC-DC  
converters  
S
Ordering information  
D
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
G
ZXMP2120FFTA  
7
8
3,000  
Top view  
Device marking  
1C4  
Issue 1 - January 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  

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