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ZXMP2120E5TA PDF预览

ZXMP2120E5TA

更新时间: 2024-10-30 03:14:07
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 383K
描述
200V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP2120E5TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT23, 5 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.25
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.15 A
最大漏源导通电阻:28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):7 pFJESD-30 代码:R-PDSO-G5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMP2120E5TA 数据手册

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ZXMP2120E5  
200V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA  
DESCRIPTION  
This 200V enhancement mode P-channel MOSFET provides users with a  
competitive specification offering efficient power handling capability, high  
impedance and is free from thermal runaway and thermally induced  
secondary breakdown. Applications benefiting from this device include a  
variety of Telecom and general high voltage circuits.  
A 4 pin SOT223 version is also available (ZXMP2120G4).  
SOT23-5  
FEATURES  
High voltage  
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
SOT23-5 package variant engineered to increase spacing between  
high voltage pins.  
APPLICATIONS  
Active clamping of primary side MOSFETs in 48 volt DC-DC converters  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
S
N/C  
D
ZXMP2120E5TA  
7
8mm embossed  
3,000 units  
N/C  
G
DEVICE MARKING  
P120  
PINOUT - TOP VIEW  
ISSUE 2 - SEPTEMBER 2006  
1

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