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ZXMN2AM832(1) PDF预览

ZXMN2AM832(1)

更新时间: 2024-11-05 23:36:11
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7页 197K
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ZXMN2AM832(1) 数据手册

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ZXMN2AM832  
MPPS™ Miniature Package Pow er Solutions  
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = 20V; RDS(ON) = 0.12 ; ID= 3A  
DESCRIPTION  
Packaged in the new innovative 3m m x 2m m MLP(Micro Leaded Package)  
outline this dual 20V N channel Trench MOSFET utilizes a unique structure  
com bining the benefits of Low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage power m anagem ent  
applications. Users will also gain several other key benefits:  
Perform ance capability equivalent to m uch larger packages  
Im proved circuit efficiency & pow er levels  
PCB area and device placem ent savings  
Reduced com ponent count  
3x2m m Dual Die MLP  
FEATURES  
Low On - Resistance  
Fast switching speed  
Low threshold  
Low gate drive  
3m m x 2m m MLP  
APPLICATIONS  
DC-DC Converters  
Power Managem ent Functions  
PINOUT  
Disconnection switches  
Motor Control  
5
6
7
2
8
D2  
D2  
D1  
D1  
ORDERING INFORMATION  
DEVICE  
REEL TAPE  
QUANTITY  
PER REEL  
S1  
G1  
S2  
G2  
WIDTH  
4
1
3
ZXMN2AM832TA  
ZXMN2AM832TC  
7’‘  
8m m  
3000 units  
3m m x 2m m Dual MLP  
underside view  
13‘  
8m m  
10000 units  
DEVICE MARKING  
DNA  
ISSUE 2 - J ULY 2003  
1
S E M IC O N D U C T O R S  

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