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ZXMN2B03E6TA

更新时间： 2024-11-06 03:52:27

品牌	Logo	应用领域
捷特科 - ZETEX		晶体栅极晶体管开关脉冲光电二极管栅极驱动
页数	文件大小	规格书
8页	579K
描述
20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability

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中文翻译

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技术参数
数据手册

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ZXMN2B03E6TA 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

ZXMN2B03E6TA 数据手册

ZXMN2B03E6

20V SOT23-6 N-channel enhancement mode MOSFET

with low gate drive capability

Summary

(⍀)

I (A)

(BR)DSS

DS(on)

0.040 @ V = 4.5V

5.4

4.6

4.0

0.055 @ V = 2.5V

0.075 @ V = 1.8V

Description

This new generation trench MOSFET from Zetex features low on-

resistance achievable with low gate drive.

Features

•

Low on-resistance

Fast switching speed

Low gate drive capability

SOT23-6 package

Applications

•

DC-DC converters

Power management functions

Disconnect switches

Motor control

Ordering information

Device

Reel size

(inches)

Tape width Quantity per reel

(mm)

Top view

ZXMN2B03E6TA

3,000

Device marking

2B3

Issue 1 - September 2006

www.zetex.com

12 3 4 5 6 7 8

中文翻译

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