Datasheet > ZXMN2B14FHTA

ZXMN2B14FHTA

更新时间： 2024-11-06 12:03:51

品牌	Logo	应用领域
TYSEMI		晶体栅极晶体管开关光电二极管栅极驱动
页数	文件大小	规格书
3页	118K
描述
20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability

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中文翻译

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ZXMN2B14FHTA 数据手册

Product specification

ZXMN2B14FH

20V SOT23 N-channel enhancement mode MOSFET

with low gate drive capability

Summary

(⍀)

I (A)

(BR)DSS

DS(on)

0.055 @ V = 4.5V

4.3

3.7

3.2

0.075 @ V = 2.5V

0.100 @ V = 1.8V

Description

This new generation of trench MOSFETs from TY features low on-

resistance achievable with low gate drive.

Features

•

Low on-resistance

Fast switching speed

Low gate drive capability

SOT23 package

Applications

•

DC-DC converters

Power management functions

Disconnect switches

Motor control

Ordering information

Device

Reel size

(inches)

Tape width Quantity per reel

(mm)

Top view

ZXMN2B14FHTA

3,000

Device marking

2B4

http://www.twtysemi.com

sales@twtysemi.com

1 of 3

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