生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.03 | 配置: | SINGLE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 0.18 A |
最大漏源导通电阻: | 10 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZVNL120CSTOF | DIODES |
获取价格 |
暂无描述 | |
ZVNL120DA | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP | |
ZVNL120DB | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP | |
ZVNL120DC | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP | |
ZVNL120G | DIODES |
获取价格 |
SOT223 N-CHANNEL ENHANCEMENT MODE | |
ZVNL120G | ZETEX |
获取价格 |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET | |
ZVNL120GTA | DIODES |
获取价格 |
Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Met | |
ZVNL120GTC | DIODES |
获取价格 |
Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Met | |
ZVNL120Z | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 270MA I(D) | SOT-89 | |
ZVNL120ZTA | ZETEX |
获取价格 |
Power Field-Effect Transistor, 0.27A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Met |