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ZVNL120CSM PDF预览

ZVNL120CSM

更新时间: 2024-10-14 13:16:15
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
3页 53K
描述
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVNL120CSM 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.05配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.18 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZVNL120CSM 数据手册

 浏览型号ZVNL120CSM的Datasheet PDF文件第2页浏览型号ZVNL120CSM的Datasheet PDF文件第3页 
N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVNL120A  
ISSUE 2 – MARCH 94  
FEATURES  
*
*
*
200 Volt VDS  
RDS(on)=10  
Low threshold  
D
G
S
APPLICATIONS  
Telephone handsets  
*
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VDS  
VALUE  
UNIT  
V
Dra in -S o u rce Vo lta g e  
200  
180  
Co n tin u o u s Drain Cu rren t at Ta m b=25°C  
Pu ls ed Dra in Cu rre n t  
ID  
m A  
A
IDM  
2
Ga te S o u rce Vo lta g e  
VGS  
V
± 20  
Po w er Dis s ip a tio n a t Ta m b=25°C  
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e  
Pto t  
700  
m W  
°C  
Tj:Ts tg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
S YMBOL MIN. MAX. UNIT CONDITIONS .  
Dra in -S o u rce Bre a kd o w n  
Vo lta g e  
BVDS S  
200  
V
ID=1m A, VGS=0V  
Ga te-S o u rce Th re s h o ld  
Vo lta g e  
VGS (th )  
0.5  
1.5  
V
ID=1m A, VDS= VGS  
Ga te-Bo d y Lea ka g e  
IGS S  
IDS S  
100  
n A  
V
GS=± 20V, VDS=0V  
Ze ro Ga te Vo lta g e Dra in  
Cu rre n t  
10  
100  
VDS=200 V, VGS=0  
VDS=160 V, VGS=0V, T=125°C(2)  
µA  
µA  
On -S ta te Dra in Cu rre n t(1)  
ID(o n )  
500  
200  
m A  
VDS=25 V, VGS=5V  
VGS=5V,ID=250m A  
S tatic Drain -S o u rce On -S ta te  
Res ista n ce (1)  
RDS (o n )  
10  
10  
VGS=3V, ID=125m A  
Fo rw a rd Tra n s co n d u ctan ce  
(1)(2)  
g fs  
m S  
VDS=25V,ID=250m A  
In p u t Ca p a cita n ce (2)  
Cis s  
85  
20  
p F  
p F  
Co m m o n S o u rce Ou tp u t  
Cap acita n ce (2)  
Co s s  
VDS=25 V, VGS=0V, f=1MHz  
Reve rs e Tra n s fe r Cap acita n ce Crs s  
(2)  
7
p F  
Tu rn -On De la y Tim e (2)(3)  
Ris e Tim e (2)(3)  
td (o n )  
8
n s  
n s  
n s  
n s  
tr  
8
VDD 25V, ID=250m A  
Tu rn -Off De la y Tim e (2)(3)  
Fa ll Tim e (2)(3)  
td (o ff)  
tf  
20  
12  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% (2) Sam ple test.  
(3) Switching tim es m easured with 50source im pedance and <5ns rise tim e on a pulse generator  
3-401  

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