Datasheet > ZTX755STOB

ZTX755STOB

更新时间： 2024-11-21 15:58:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	77K
描述
1000mA, 150V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3

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技术参数
数据手册

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ZTX755STOB 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	TO-92	包装说明：	TO-92 COMPATIBLE, E-LINE PACKAGE-3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.78	Base Number Matches：	1

ZTX755STOB 数据手册

PNP SILICON PLANAR

ZTX754

ZTX755

MEDIUM POWER TRANSISTORS

ISSUE 2 JULY 94

FEATURES

150 Volt V_CEO

1 Amp continuous current

Low saturation voltage

P_tot= 1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

ZTX754

-125

ZTX755

-150

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-125

-150

-5

-2

-1

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

ZTX754

ZTX755

UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-125

-5

-150

-5

I_C=-100µA, I_E=0

I_C=-10mA, I_B=0*

I_E=-100µA, I_C=0

V_CB=-100V, I_E=0

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

-100

V_CB=-125V, I_E=0

Emitter Cut-Off

Current

I_EBO

V_EB=-3V, I_C=0

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

-0.5

I_C=-500mA, I_B=-50mA*

I_C=-1A, I_B=-200mA*

Base-Emitter

Saturation Voltage

-1.1

I_C=-500mA, I_B=-50mA*

Base-Emitter Turn-On V_BE(on)

Voltage

-1.0

IC=-500mA, V_CE=-5V*

Static Forward

Current Transfer Ratio

h_FE

I_C=-10mA, V_CE=-5V

I_C=-500mA, V_CE=-5V*

I_C=-1A, V_CE=-5V*

Transition Frequency f_T

Output Capacitance C_obo

MHz

I_C=-10mA, V_CE=-20V

f=20MHz

V_CB=-20V, f=1MHz

3-263

中文翻译

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与ZTX755STOB相关器件

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