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ZTX757 PDF预览

ZTX757

更新时间: 2024-09-12 22:18:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管高压局域网
页数 文件大小 规格书
2页 53K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

ZTX757 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.14Is Samacsys:N
最大集电极电流 (IC):0.5 A基于收集器的最大容量:20 pF
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
VCEsat-Max:0.5 VBase Number Matches:1

ZTX757 数据手册

 浏览型号ZTX757的Datasheet PDF文件第2页 
PNP SILICON PLANAR MEDIUM POWER  
ZTX756  
ZTX757  
HIGH VOLTAGE TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
300 Volt VCEO  
0.5 Amp continuous current  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX756  
-200  
ZTX757  
-300  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-200  
-300  
-5  
-1  
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-0.5  
1
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
ZTX756  
ZTX757  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-200  
-200  
-5  
-300  
-300  
-5  
V
V
V
IC=-100µA, IE=0  
Collector-Emitter  
Breakdown Voltage  
IC=-10mA, IB=0*  
Emitter-Base  
Breakdown Voltage  
IE=-100µA, IC=0  
Collector Cut-Off  
Current  
-100  
-100  
-0.5  
-1.0  
-1.0  
nA  
nA  
VCB=-160V, IE=0  
VCB=-200V, IE=0  
-100  
-100  
Emitter Cut-Off  
Current  
IEBO  
nA  
VEB=-3V, IC=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
-0.5  
-1.0  
-1.0  
V
IC=-100mA,  
IB=-10mA*  
Base-Emitter  
Saturation Voltage  
V
IC=-100mA,  
IB=-10mA*  
Base-Emitter  
Turn-On Voltage  
V
IC=-100mA, VCE=-5V*  
Static Forward  
Current Transfer  
Ratio  
50  
40  
50  
40  
IC=-100mA, VCE=-5V*  
IC=-10mA, VCE=-5V*  
Transition  
Frequency  
fT  
30  
30  
MHz IC=-10mA, VCE=-20V  
f=20MHz  
Output Capacitance Cobo  
20  
20  
pF  
VCB=-20V, f=1MHz  
3-265  

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