Datasheet > YJQ3611B

YJQ3611B

更新时间： 2024-04-24 09:03:39

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
10页	598K
描述
DFN3333-8L

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YJQ3611B 数据手册

YJQ3611B

PMOS Electrical Characteristics (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

V_GS= 0V, I_D=-250μA

V_DS=-30V, V_GS=0V

V_DS=-30V, V_GS=0V, Tj=150℃

V_GS= ±20V, V_DS=0V

V_DS= V_GS, I_D=-250μA

V_GS=-10V, I_D=-10A

V_GS=-4.5V, I_D=-5A

I_S=-10A, V_GS=0V

-30

-1

I_DSS

μA

-100

±100

-2.4

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

V_GS(th)

-1.0

-1.5

Static Drain-Source On-Resistance

R_DS(on)

mΩ

Diode Forward Voltage

Gate resistance

V_SD

R_G

I_S

-1.2

f=1MHz

Maximum Body-Diode Continuous Current

Dynamic Parameters

Input Capacitance

-20

C_iss

C_oss

C_rss

490

Output Capacitance

V_DS=-15V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

Switching Parameters

Total Gate Charge

Q_g

Q_gs

Q_gd

Q_rr

t_rr

Gate-Source Charge

Gate-Drain Charge

V_GS=-10V, V_DS=-15V, I_D=-10A

I_F=-10A, di/dt=100A/us

2.5

2.3

Reverse Recovery Charge

Reverse Recovery Time

Turn-on Delay Time

t_D(on)

t_r

t_D(off)

t_f

Turn-on Rise Time

3.5

V_GS=-10V, V_DD=-15V, ID=-10A

R_GEN=2.5Ω

Turn-off Delay Time

Turn-off fall Time

A. Repetitive rating; pulse width limited by max. junction temperature.

B. NMOS: T_J=25℃, V_DD=25V, V_GS=10V, R_G=25Ω, L=0.5mH, IAS=6A.

PMOS: T_J=25℃, V_DD=-25V, V_GS=-10V, R_G=25Ω, L=0.5mH, IAS=-8A.

C. P_dis based on max. junction temperature, using junction-case thermal resistance.

D. The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2oz. Copper, in the still air environment with T_A=25℃.

The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.

3 / 10

S-E352

Rev.1.0,02-Jun-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

1 234 5 6 7...10

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