Datasheet > YJD50P04AJQ

YJD50P04AJQ

更新时间： 2024-04-09 19:02:10

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	266K
描述
TO-252

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YJD50P04AJQ 数据手册

YJD50P04AJQ

Electrical Characteristics (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS= 0V, I_D=-250μA

V_DS=-40V, V_GS=0V

V_GS= ±20V, V_DS=0V

V_DS= V_GS, I_D=-250μA

V_GS=-10V, I_D=-20A

V_GS=-4.5V, I_D=-20A

I_S=-20A, V_GS=0V

f=1MHz

-40

-1

μA

I_GSS

±100

-2.5

V_GS(th)

-1

-1.5

11.5

-0.85

Static Drain-Source On-Resistance

R_DS(on)

mΩ

Diode Forward Voltage

Gate resistance

V_SD

R_G

I_S

-1.2

Maximum Body-Diode Continuous Current

Dynamic Parameters

Input Capacitance

-50

C_iss

C_oss

C_rss

3500

270

Output Capacitance

V_DS=-25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

Switching Parameters

Total Gate Charge

230

Q_g

Q_gs

Q_gd

Q_rr

t_rr

73.3

8.9

Gate-Source Charge

Gate-Drain Charge

V_GS=-10V, V_DS=-20V, I_D=-25A

I_F=-25A, di/dt=100A/us

15.3

12.9

25.4

13.6

11.8

201.5

92.5

Reverse Recovery Charge

Reverse Recovery Time

Turn-on Delay Time

t_D(on)

t_r

t_D(off)

t_f

Turn-on Rise Time

V_GS=-10V, V_DD=-20V, I_D=-25A

R_GEN=6Ω

Turn-off Delay Time

Turn-off fall Time

A. Repetitive rating; pulse width limited by max. junction temperature.

B. T_J=25℃, V_DD=--70V, V_G=-10V, L=0.5mH, IAS=-9.5A.

C. P_dis based on max. junction temperature, using junction-case and junction-ambient thermal resistance.

D. The value of RθJA is measured with the device mounted on the minimum recommend pad size, in the still air environment with TA =25℃. The

maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.

2 / 7

S-B3279

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,25-Dec-23

123 4 5 6 7

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