RoHS
COMPLIANT
YJD60G04HHQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
60A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<7.2mΩ
General Description
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Fast switching and soft recovery
● Moisture Sensitivity Level 1
● Part no. with suffix “Q” means AEC-Q101 qualified
Applications
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
● DC-DC convertor
● 12V Automotive systems
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
60
V
TC=25℃
42
TC =100℃
TA=25℃
Drain Current
ID
A
12
8.6
TA =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
200
68
A
EAS
mJ
73
TC=25℃
36
TC =100℃
TA=25℃
Total Power Dissipation C
PD
W
2.7
1.3
TA =100℃
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B3173
Rev.1.0, 14-Sep-23
www.21yangjie.com