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YJD6D0G04HHQ PDF预览

YJD6D0G04HHQ

更新时间: 2024-09-18 17:01:23
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扬杰 - YANGJIE /
页数 文件大小 规格书
8页 276K
描述
TO-252

YJD6D0G04HHQ 数据手册

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RoHS  
COMPLIANT  
YJD6D0G04HHQ  
N-Channel Enhancement Mode Field Effect Transistor  
Product Summary  
● VDS  
40V  
● ID  
72A  
● RDS(ON)( at VGS=10V)  
● 100% EAS Tested  
● 100% VDS Tested  
6.0mΩ  
General Description  
● Low RDS(on) & FOM  
● Extremely low switching loss  
● Excellent stability and uniformity  
● Fast switching and soft recovery  
● Moisture Sensitivity Level 1  
● Part no. with suffix “Q” means AEC-Q101 qualified  
Applications  
● Power switching application  
● Hard switched and high frequency circuits  
● Uninterruptible power supply  
● DC-DC convertor  
12V Automotive systems  
Absolute Maximum Ratings (T =25unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
Unit  
V
Drain-source Voltage  
Gate-source Voltage  
VDS  
40  
VGS  
±20  
V
72  
TC=25  
50  
TC =100℃  
TA=25℃  
Drain Current  
ID  
A
15  
10  
TA =100℃  
Pulsed Drain Current A  
Avalanche energy B  
IDM  
288  
A
EAS  
95  
mJ  
55  
TC=25℃  
27  
TC =100℃  
TA=25℃  
Total Power Dissipation C  
PD  
W
3
1.5  
TA =100℃  
Junction and Storage Temperature Range  
TJ ,TSTG  
-55+175  
1 / 8  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-B3263  
Rev.1.0,14-Dec-23  
www.21yangjie.com