Datasheet > YJD60N04A

YJD60N04A

更新时间： 2024-09-18 15:18:43

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	919K
描述
TO-252

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中文翻译

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数据手册

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YJD60N04A 数据手册

RoHS

COMPLIANT

YJD60N04A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

40 V

● I_D

60 A

● R_DS(ON)( at V_GS= 10V)

＜7.0 mohm

● R_DS(ON)( at V_GS= 4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜9.5 mohm

General Description

● Trench Power LV MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● High current load applications

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Total Power Dissipation

Single Pulse Avalanche Energy ^B

I_DM

200

T_C=25℃

P_D

T_C=100℃

E_AS

110

℃/ W

℃

Thermal Resistance Junction-to-Case ^C

Junction and Storage Temperature Range

R_θJC

2.8

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

YJD60N04A

F1/F2

YJD60N04A

2500

25000

13“ reel

1 / 8

S-E623

Rev.3.2,17-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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