Datasheet > YJD65G10B

YJD65G10B

更新时间： 2024-04-09 19:01:41

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	771K
描述
TO-252

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数据手册

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YJD65G10B 数据手册

RoHS

COMPLIANT

YJD65G10B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

● I_D

65A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜9.5mohm

General Description

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Fast switching and soft recovery

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Consumer electronic power supply

● Motor control

● Synchronous-rectification

● Isolated DC/DC convertor

● Invertors

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

100

±20

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

Drain Current

I_D

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

260

182

2.2

EAS

T_A=25℃

T_A=100℃

Tc=25℃

Tc=100℃

0.9

Total Power Dissipation ^C

P_D

38.4

-55～+150

℃

Junction and Storage Temperature Range

T_J,T_STG

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

℃/W

Steady-State

R_θJC

1.0

1.3

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJD65G10B

2500

25000

13”Reel

1 / 6

S-E144

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.2,14-Nov-23

12 3 4 5 6

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