RoHS
COMPLIANT
YJD65G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
65A
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
<8.6 mohm
<11.5 mohm
General Description
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Fast switching and soft recovery
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Consumer electronic power supply
● Motor control
● Synchronous-rectification
● Isolated DC/DC convertor
● Invertors
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
65
V
TC=25℃
Drain Current
ID
A
TC=100℃
41
Pulsed Drain Current A
Avalanche energy B
IDM
260
A
EAS
169
mJ
Tc=25℃
96
Total Power Dissipation C
PD
W
Tc=100℃
38.4
-55~+150
Junction and Storage Temperature Range
■Thermal resistance
Parameter
TJ ,TSTG
℃
Symbol
RθJA
Typ
15
Max
20
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
t≤10S
Steady-State
Steady-State
45
55
℃/W
RθJC
1.0
1.3
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJD65G10A
F1
YJD65G10A
2500
/
25000
13”Reel
1 / 6
S-E119
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.2,13-Apr-22