Datasheet > YJD80GP06B

YJD80GP06B

更新时间： 2024-09-18 17:02:07

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	736K
描述
TO-252

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中文翻译

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YJD80GP06B 数据手册

RoHS

COMPLIANT

YJD80GP06B

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-60 V

● I_D

-80 A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-6V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜8.4 mΩ

＜11 mΩ

General Description

● Split gate trench MOSFET technology

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-60

±1 8

-8

T_A=25℃

-5

T_A=100℃

T_C=25℃

Drain Current

I_D

-80

-50

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-300

506

1.8

EAS

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

0.7

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

1.2

1.5

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJD80GP06B

F1/F2

YJD80GP06B

2500

25000

13”Reel

1 / 7

S-E218

Rev.1.1,27-Jul-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

中文翻译

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