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XP6435 PDF预览

XP6435

更新时间: 2024-11-27 22:11:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
2页 36K
描述
Silicon PNP epitaxial planer transistor

XP6435 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-88包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

XP6435 数据手册

 浏览型号XP6435的Datasheet PDF文件第2页 
Composite Transistors  
XP6435  
Silicon PNP epitaxial planer transistor  
Unit: mm  
For high-frequency amplification  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
1
6
Features  
2
3
5
4
Two elements incorporated into one package.  
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
2SA1022 × 2 elements  
0.2±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
1 : Emitter (Tr1)  
2 : Emitter (Tr2)  
3 : Base (Tr2)  
4 : Collector (Tr2)  
5 : Base (Tr1)  
6 : Collector (Tr1)  
EIAJ : SC–88  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
–30  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Total power dissipation  
S–Mini Type Package (6–pin)  
Rating  
of  
element  
–20  
V
–5  
V
Marking Symbol: 7W  
Internal Connection  
–30  
mA  
mW  
˚C  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
1
6
5
4
Tstg  
–55 to +150  
˚C  
2
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
– 0.1  
–100  
–10  
Unit  
µA  
VCB = –10V, IE = 0  
Collector cutoff current  
ICEO  
IEBO  
hFE  
VCE = –20V, IB = 0  
VEB = –5V, IC = 0  
µA  
Emitter cutoff current  
µA  
Forward current transfer ratio  
Forward current transfer hFE ratio  
VCB = –10V, IE = 1mA  
50  
220  
hFE (small/large)*1 VCB = –10V, IE = 1mA  
0.5  
0.99  
– 0.1  
– 0.7  
Collector to emitter saturation voltage VCE(sat)  
IC = –10mA, IB = –1mA  
V
V
Base to emitter voltage  
Transition frequency  
Noise figure  
VBE  
fT  
VCE = –10V, IC = –1mA  
VCB = –10V, IE = 1mA, f = 200MHz  
VCB = –10V, IE = 1mA, f = 5MHz  
VCB = –10V, IE = 1mA, f = 2MHz  
VCB = –10V, IE = 1mA, f = 10.7MHz  
150  
MHz  
dB  
NF  
Zrb  
2.8  
22  
Reverse transfer impedance  
Common emitter reverse transfer capacitance Cre  
1.2  
pF  
*1 Ratio between 2 elements  
1

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