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XP6534 PDF预览

XP6534

更新时间: 2024-11-27 22:11:19
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
2页 36K
描述
Silicon NPN epitaxial planer transistor

XP6534 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-88包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84最大集电极电流 (IC):0.015 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:20 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):40
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):650 MHz
Base Number Matches:1

XP6534 数据手册

 浏览型号XP6534的Datasheet PDF文件第2页 
Composite Transistors  
XP6534  
Silicon NPN epitaxial planer transistor  
Unit: mm  
For high-frequency amplification  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
1
6
Features  
2
3
5
4
Two elements incorporated into one package.  
Reduction of the mounting area and assembly cost by one half.  
Basic Part Number of Element  
2SC2404 × 2 elements  
0.2±0.1  
Absolute Maximum Ratings (Ta=25˚C)  
1 : Emitter (Tr1)  
2 : Emitter (Tr2)  
3 : Base (Tr2)  
4 : Collector (Tr2)  
5 : Base (Tr1)  
6 : Collector (Tr1)  
EIAJ : SC–88  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
Total power dissipation  
30  
S–Mini Type Package (6–pin)  
Rating  
of  
element  
20  
V
3
15  
V
Marking Symbol: 7F  
Internal Connection  
mA  
mW  
˚C  
PT  
150  
Overall Junction temperature  
Storage temperature  
Tj  
150  
Tr1  
1
6
5
4
Tstg  
–55 to +150  
˚C  
2
3
Tr2  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
30  
3
typ  
max  
260  
1
Unit  
V
Collector to base voltage  
Emitter to base voltage  
IC = 10µA, IE = 0  
VEBO  
hFE  
IE = 10µA, IC = 0  
V
Forward current transfer ratio  
Forward current transfer hFE ratio  
Base to emitter voltage  
VCB = 6V, IE = –1mA  
40  
0.5  
hFE (small/large)*1 VCB = 6V, IE = –1mA  
0.99  
720  
0.8  
VBE  
VCB = 6V, IE = –1mA  
mV  
pF  
Common emitter reverse transfer capacitance Cre  
VCB = 6V, IE = –1mA, f = 10.7MHz  
VCB = 6V, IE = –1mA, f = 200MHz  
VCB = 6V, IE = –1mA, f = 100MHz  
VCB = 6V, IE = –1mA, f = 100MHz  
Transition frequency  
Noise figure  
fT  
450  
650  
3.3  
24  
MHz  
dB  
NF  
PG  
Power gain  
dB  
*1 Ratio between 2 elements  
1

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