型号 | 品牌 | 获取价格 | 描述 | 数据表 |
XMFLS APPLICATION | ETC |
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本申请表为厦门外国语学校学生申请五月省际模拟联合国大会专用。其他学校申请人请不要使用此表。 | |
XMFP1-M3 | MURATA |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
XMFP2-M3 | MURATA |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
XMFP4-M4 | MURATA |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
XMFS2-M1 | MURATA |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, J | |
XMFS3-M1 | MURATA |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, J | |
XMG3522R030QRQSTQ1 | TI |
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具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET | RQS | |
XMGG7-20B3 | ETC |
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Surface Mount High Dynamic Range Mixer 3400-3600 MHz, Upconverter, High IP3 | |
XMIC00150000F | VISHAY |
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Thin Film Microwave Resistor | |
XMIC00150000G | VISHAY |
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Thin Film Microwave Resistor |