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XMFP2-M3 PDF预览

XMFP2-M3

更新时间: 2024-11-29 20:00:03
品牌 Logo 应用领域
村田 - MURATA 放大器晶体管
页数 文件大小 规格书
1页 54K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC PACKAGE-3

XMFP2-M3 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
风险等级:5.84外壳连接:SOURCE
配置:SINGLEFET 技术:JUNCTION
最高频带:C BANDJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

XMFP2-M3 数据手册

  
HIGH FREQUENCY DEVICES  
GAAS FIELD EFFECT TRANSISTORS  
POWER FET’S  
XMFP Series  
FEATURES  
High power output  
Excellent linear power gain  
APPLICATIONS  
C-band power amps up to 6GHz  
Wireless telecommunication base stations (GSM, DCS,  
PCS, ISM, etc.)  
DIMENSIONS: mm  
XMFP1-M3  
XMFP2-M3  
XMFP3-M3  
4.5  
4.5  
4.5  
A
B
A
B
A
B
0.5  
2.5  
0.5  
2.5  
0.5  
2.5  
M
M
M
A k  
B k  
C k  
1.0  
1.0  
1.0  
0.42 0.47 0.42  
0.42 0.47 0.42  
0.42 0.47 0.42  
1.1  
0.4  
1.1  
0.4  
1.1  
0.4  
1.5  
1.5  
1.5  
Pin  
Marking  
Pin  
Marking  
A : Part No.  
Source B : Lot No.  
Drain Plastic with Heat Sink  
Pin  
Marking  
Gate  
A : Part No.  
Gate  
Gate  
A : Part No.  
Source B : Lot No.  
Drain Plastic with Heat Sink  
Source B : Lot No.  
Drain  
Plastic with Heat Sink  
SPECIFICATIONS  
V
GDO  
I
DSS (*1)  
gm  
DS = 3V  
V
GS (OFF)  
DS = 3V  
= 1mA  
P
O
(*2) add (*2)  
G
LP  
Rth (*3)  
Channel to  
case  
Test  
V
DS = 3V  
GS = 0V  
V
V
V
V
V
VDS = 4V, ID = 0.5IDSS, f = 1.9GHz  
I
G
= –50A  
Conditions  
V
ID  
= 120mA  
I
D
(*2: PIN = 10dBm)  
45%  
Min.  
200mA  
280mA  
350mA  
70mS  
–3.8V  
–2.8V  
–2.0V  
XMFP1-M3  
Typ.  
100mS  
23dBm  
16dB  
V
Max.  
–8V  
100°C/W  
Channel to  
case  
Test  
Conditions  
V
DS = 3V  
GS = 0V  
V
DS = 3V  
DS = 3V  
= 1mA  
DS = 4V, I  
D
= 0.5IDSS, f = 1.9GHz  
I
G
G
= –100A  
V
I
D
= 270mA  
I
D
(*2: PIN = 15dBm)  
26dBm  
45%  
15dB  
Min.  
Typ.  
Max.  
400mA  
550mA  
700mA  
150mS  
220mS  
–3.8V  
–2.8V  
–2.0V  
XMFP2-M3  
–8V  
50°C/W  
Channel to  
case  
Test  
V
DS = 5V  
GS = 0V  
1.2A  
V
DS = 5V  
= 600mA  
DS = 3V  
= 3mA  
V
DS = 4V, I  
D
= 0.8A, f = 1.9GHz  
I
= –600A  
Conditions  
V
I
D
I
D
(*2: PIN = 20dBm)  
45%  
12dB  
Min.  
Typ.  
Max.  
450mS  
520mS  
–4.0V  
–3.0V  
–2.0V  
XMFP3-M3  
1.7A  
30dBm  
V
–12V  
2.2A  
30°C/W  
Channel to  
case  
Test  
V
DS = 5V  
GS = 0V  
VDS = 5V  
DS = 3V  
= 6mA  
DS = 4.8V, I  
D
= 1.6A, f = 0.9GHz  
I
G
= –1200A  
Conditions  
V
ID  
= 600mA  
I
D
(*2: PIN = 24dBm)  
*1: Pulsed Measurement: duty cycle 1:100; tON = 100ms  
*3: DVf Measurement  
Ta = 25°C  
For more detailed information regarding this product line, see Catalog No. 0-35-E, or see Murata Electronics’ web page for .pdf files and S-parameters (www.murata.com).  
286  
CG01-J  

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