生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | FET 技术: | JUNCTION |
最高频带: | C BAND | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
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RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, J | |
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具有集成驱动器、保护和温度报告功能的汽车类 650V 30mΩ GaN FET | RQS | |
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Surface Mount High Dynamic Range Mixer 3400-3600 MHz, Upconverter, High IP3 | |
XMIC00150000F | VISHAY |
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XMIC00150000G | VISHAY |
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XMIC00150000J | VISHAY |
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Thin Film Microwave Resistor | |
XMIC00150000K | VISHAY |
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Thin Film Microwave Resistor |