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X2N4338 PDF预览

X2N4338

更新时间: 2024-11-06 03:15:27
品牌 Logo 应用领域
CALOGIC 晶体放大器小信号场效应晶体管开关
页数 文件大小 规格书
1页 23K
描述
N-Channel JFET Low Noise Amplifier

X2N4338 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:UNCASED CHIP, X-XUUC-N3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.90.00.00
风险等级:5.92Is Samacsys:N
其他特性:LOW NOISE外壳连接:GATE
配置:SINGLE最大漏源导通电阻:2500 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):3 pF
JESD-30 代码:X-XUUC-N3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

X2N4338 数据手册

  
N-Channel JFET  
Low Noise Amplifier  
CORPORATION  
2N4338 – 2N4341  
FEATURES  
ABSOLUTE MAXIMUM RATINGS  
(TA = 25oC unless otherwise noted)  
Exceptionally High Figure of Merit  
Radiation Immunity  
Extremely Low Noise and Capacitance  
High Input Impedance  
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +175oC  
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC  
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW  
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/oC  
NOTE: Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These are  
stress ratings only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections  
of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
APPLICATIONS  
Low-level Choppers  
Data Switches  
Multiplexers and Low Noise Amplifiers  
PIN CONFIGURATION  
ORDERING INFORMATION  
Part  
Package  
Temperature Range  
-55oC to +175oC  
TO-18  
2N4338-41  
Hermetic TO-18  
X2N4338-41 Sorted Chips in Carriers -55oC to +175oC  
G,C  
S
D
5010  
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)  
2N4338  
2N4339  
2N4340  
2N4341  
SYMBOL  
PARAMETER  
Gate Reverse Current  
UNITS  
TEST CONDITIONS  
MIN MAX MIN MAX MIN MAX MIN MAX  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
-0.1  
nA  
IGSS  
VGS = -30V, VDS = 0  
TA = 150oC  
µA  
BVGSS  
VGS(off)  
Gate-Source Breakdown Voltage  
Gate-Source Cutoff Voltage  
-50  
-50  
-50  
-1  
-50  
-2  
IG = -1µA, VDS = 0  
V
-0.3  
-1  
-0.6 -1.8  
-3  
-6  
VDS = 15V, ID = 0.1µA  
0.05  
(-5)  
0.05  
(-5)  
0.05  
(-5)  
0.07  
(-10) (V)  
nA  
V
DS = 15V,  
ID(off)  
IDSS  
gfs  
Drain Cutoff Current  
VGS = ( )  
Saturation Drain Current (Note 2)  
0.2 0.6 0.5 1.5 1.2 3.6  
3
9
mA  
VDS = 15V, VGS = 0  
Common-Source Forward  
Transconductance (Note 2)  
600 1800 800 2400 1300 3000 2000 4000  
V
DS = 15V,  
GS = 0  
µS  
V
f = 1kHz  
gos  
Common-Source Output Conductance  
Drain-Source ON Resistance  
5
2500  
7
15  
1700  
7
30  
1500  
7
60  
rDS(on)  
Ciss  
800 ohm VDS = 0, IDS = 0  
7
Common-Source Input Capacitance  
V
DS = 15V,  
pF  
f = 1MHz  
f = 1kHz  
Common-Source Reverse Transfer  
Capacitance  
VGS = 0 (Note 1)  
Crss  
3
3
3
3
VDS = 15V,  
VGS = 0  
Rgen = 1meg,  
BW = 200Hz  
NF  
Noise Figure (Note 1)  
1
1
1
1
dB  
NOTES: 1. For design reference only, not 100% tested.  
2. Pulse test duration 2ms (non-JEDEC Condition).  

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