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WSF512K16-XH2X PDF预览

WSF512K16-XH2X

更新时间： 2024-11-11 23:43:11
品牌 Logo 应用领域
其他 - ETC 闪存静态存储器
页数 文件大小 规格书
15页 186K
描述
SRAM/Flash MCP

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WSF512K16-XH2X 数据手册

 浏览型号WSF512K16-XH2X的Datasheet PDF文件第2页浏览型号WSF512K16-XH2X的Datasheet PDF文件第3页浏览型号WSF512K16-XH2X的Datasheet PDF文件第4页浏览型号WSF512K16-XH2X的Datasheet PDF文件第5页浏览型号WSF512K16-XH2X的Datasheet PDF文件第6页浏览型号WSF512K16-XH2X的Datasheet PDF文件第7页 
WSF512K16-XXX  
HI-RELIABILITY PRODUCT  
512KX16 SRAM/FLASH MODULE, SMD 5962-96901  
FEATURES  
FLASH MEMORY FEATURES  
■ 100,000 Erase/Program Cycles  
■ Access Times of 35ns (SRAM) and 90ns (FLASH)  
■ Access Times of 70ns (SRAM) and 120ns (FLASH)  
■ Packaging  
■ Sector Architecture  
• 8 equal size sectors of 64K bytes each  
• Any combination of sectors can be concurrently erased.  
Also supports full chip erase  
• 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic  
HIP (Package 402)  
■ 5 Volt Programming; 5V ± 10% Supply  
■ Embedded Erase and Program Algorithms  
■ Hardware Write Protection  
• 68 lead, Hermetic CQFP (G2), 22mm (0.880") square  
(Package 500). Designed to fit JEDEC 68 lead 0.990” CQFJ  
footprint (Fig. 2)  
■ 512Kx16 SRAM  
■ Page Program Operation and Internal Program Control Time.  
Note: Programming information available upon request.  
■ 512Kx16 5V FLASH  
■ Organized as 512Kx16 of SRAM and 512Kx16 of Flash  
Memory with separate Data Busses  
■ Both blocks of memory are User Configurable as 1Mx8  
■ Low Power CMOS  
■ Commercial, Industrial and Military Temperature Ranges  
■ TTL Compatible Inputs and Outputs  
■ Built-in Decoupling Caps and Multiple Ground Pins for  
Low Noise Operation  
■ Weight - 13 grams typical  
FIG. 1 PIN CONFIGURATION FOR WSF512K16-XH2X  
PIN DESCRIPTION  
TOP VIEW  
FD0-15 Flash Data Inputs/Outputs  
SD0-15 SRAM Data Inputs/Outputs  
1
12  
23  
34  
45  
56  
SD  
SD  
8
9
SWE  
2
SD15  
SD14  
SD13  
SD12  
OE  
FD  
8
9
V
CC  
FD15  
FD14  
FD13  
FD12  
A0-18  
SWE1-2  
SCS1-2  
OE  
Address Inputs  
SRAM Write Enable  
SRAM Chip Selects  
Output Enable  
SCS  
GND  
SD11  
2
FD  
FCS  
2
SD10  
FD10  
FWE  
2
A
A
A
A
A
13  
14  
15  
16  
18  
A
A
6
7
FD11  
VCC  
Power Supply  
A
A
A
V
10  
11  
12  
CC  
A
3
4
5
1
1
A
A
0
1
2
7
6
5
4
GND  
Ground  
A
17  
NC  
A
NC  
Not Connected  
Flash Write Enable  
Flash Chip Select  
FWE1-2  
FCS1-2  
SWE  
1
A
A
8
9
0
1
2
A
A
SD7  
SD6  
SD5  
SD4  
FWE  
FCS  
FD  
FD  
FD  
FD  
BLOCK DIAGRAM  
SD  
SD  
SD  
0
1
2
SCS  
NC  
1
FD  
FD  
FD  
FWE1 FCS1  
FWE2 FCS2  
SWE1 SCS1  
SWE2 SCS2  
OE  
A0-18  
GND  
FD  
512K x 8  
FLASH  
512K x 8  
FLASH  
512K x 8  
SRAM  
512K x 8  
SRAM  
SD  
3
3
11  
22  
33  
44  
55  
66  
8
8
8
8
FD0-7  
FD8-15  
SD0-7  
SD8-15  
1
October 2000 Rev.  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
1234567...15

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与WSF512K16-XH2X相关器件

型号 品牌 获取价格 描述 数据表
WSF512K16-XXX WEDC

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 		512KX16 SRAM/FLASH MODULE, SMD 5962-96901
WSF512K32-27G2TCA WEDC

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 		Memory Circuit, Flash+SRAM, 512KX32, CMOS, CQFP68, 0.880 X 0.880 INCH, 0.180 INCH HEIGHT,
WSF512K32-27G2TI WEDC

获取价格

 		Memory Circuit, Flash+SRAM, 512KX32, CMOS, CQFP68, 0.880 X 0.880 INCH, 0.180 INCH HEIGHT,
WSF512K32-27G2TIA WEDC

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 		Memory Circuit, Flash+SRAM, 512KX32, CMOS, CQFP68, 0.880 X 0.880 INCH, 0.180 INCH HEIGHT,
WSF512K32-27H2C WEDC

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 		Memory Circuit, Flash+SRAM, 512KX32, CMOS, CPGA66, 1.385 X 1.385 INCH, PGA TYPE, HERMETIC
WSF512K32-27H2I WEDC

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 		Memory Circuit, Flash+SRAM, 512KX32, CMOS, CPGA66, 1.385 X 1.385 INCH, PGA TYPE, HERMETIC
WSF512K32-27H2M WEDC

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 		Memory Circuit, Flash+SRAM, 512KX32, CMOS, CPGA66, 1.385 X 1.385 INCH, PGA TYPE, HERMETIC
WSF512K32-27H2M MICROSEMI

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 		Memory Circuit, 512KX32, CMOS, CPGA66, 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, PGA-6
WSF512K32-27H2MA MICROSEMI

获取价格

 		Memory Circuit, 512KX32, CMOS, CPGA66, 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, PGA-6
WSF512K32-29G2TC WEDC

获取价格

 		512KX32 SRAM / FLASH MODULE

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