Datasheet > 存储 > 其他内存集成电路> WSF512K32-29H2M

WSF512K32-29H2M

更新时间： 2024-09-24 03:16:07

品牌	Logo	应用领域
WEDC		闪存存储内存集成电路静态存储器
页数	文件大小	规格书
14页	446K
描述
512KX32 SRAM / FLASH MODULE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WSF512K32-29H2M 数据手册

WSF512K32-XXX

White Electronic Designs

512KX32 SRAM / FLASH MODULE

ꢀ

Built in Decoupling Caps and Multiple Ground Pins

for Low Noise Operation

Weight - 13 grams typical

FEATURES

ꢀ

Access Times of 25ns (SRAM) and 70, 90ns

ꢀ

(FLASH)

ꢀ

Packaging

FLASH MEMORY FEATURES

• 66 pin, PGA Type, 1.385" square HIP, Hermetic

Ceramic HIP (Package 402)

ꢀ

100,000 Erase/Program Cycles

Sector Architecture

• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880")

square (Package 509) 4.57mm (0.180") height.

Designed to ﬁt JEDEC 68 lead 0.990" CQFJ

footprint (Figure 2). Package to be developed.

• 8 equal size sectors of 64KBytes each

• Any combination of sectors can be concurrently

erased. Also supports full chip erase

ꢀ

5 Volt Programming; 5V 10ꢀ Supply

Embedded Erase and Program Algorithms

Hardware Write Protection

Page Program Operation and Internal Program

Control Time.

ꢀ

512Kx32 SRAM

512Kx32 5V Flash

Organized as 512Kx32 of SRAM and 512Kx32 of

Flash Memory with common Data Bus

Low Power CMOS

ꢀ

* This product is subject to change without notice.

Note: Programming information available upon request.

Commercial, Industrial and Military Temperature

Ranges

ꢀ

TTL Compatible Inputs and Outputs

Figure 1 – PIN CONFIGURATION FOR WSF512K32-29H2X

Pin Description

Top View

I/O0-31

Data Inputs/Outputs

Address Inputs

SRAM Write Enables

SRAM Chip Select

Output Enable

Power Supply

Ground

Not Connected

Flash Write Enables

Flash Chip Select

A0-18

SWE1-4#

SCS#

OE#

VCC

GND

FWE1-4#

FCS#

I/O8

I/O9

I/O10

A14

A16

A11

FWE2#

SWE2#

GND

I/O11

A10

I/O15

I/O24

I/O25

I/O26

VCC

SWE4#

FWE4#

I/O27

I/O31

I/O30

I/O29

I/O28

I/O14

I/O13

I/O12

OE#

A12

A17

SWE1#

A13

A15

FWE1#

I/O7

Block Diagram

FWE

SWE

FWE

SWE

FWE

SWE

FWE4# SWE4#

A18

I/O0

I/O1

I/O2

VCC

FCS#

SCS#

I/O3

FWE3#

SWE3#

GND

I/O23

I/O22

I/O21

I/O20

OE#

A0-18

SCS#

FCS#

I/O6

I/O16

I/O17

I/O18

I/O5

512K x 8 Flash

512K x 8 SRAM

I/O4

I/O19

I/O0-7

I/O8-15

I/O16-23

I/O24-31

May 2006

Rev. 9

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5 6 7...14

中文翻译

下载PDF

与WSF512K32-29H2M相关器件

型号	品牌	获取价格	描述	数据表
WSF512K32-29H2MA	WEDC	获取价格	512KX32 SRAM / FLASH MODULE
WSF512K32-29H2MA	MICROSEMI	获取价格	Memory Circuit, 512KX32, CMOS, CPGA66, 1.385 X 1.385 INCH, HERMETIC SEALED, CERAMIC, PGA-6
WSF512K32-XG2TX	ETC	获取价格	SRAM/Flash MCP
WSF512K32-XH2X	ETC	获取价格	SRAM/Flash MCP
WSF512K32-XXX	WEDC	获取价格	512KX32 SRAM / FLASH MODULE
WSFC0001330BF	VISHAY	获取价格	RES,SMT,THIN FILM,13.3 OHMS,100WV,1% +/-TOL,-250,250PPM TC,0202 CASE
WSFC0013600AG	VISHAY	获取价格	RES,SMT,THIN FILM,360 OHMS,100WV,2% +/-TOL,-100,100PPM TC,0202 CASE
WSFC00190900F	VISHAY	获取价格	RES,SMT,THIN FILM,9.09K OHMS,100WV,1% +/-TOL,-100,100PPM TC,0202 CASE
WSFC0019090AF	VISHAY	获取价格	RES,SMT,THIN FILM,909 OHMS,100WV,1% +/-TOL,-100,100PPM TC,0202 CASE
WSFC00210000F	VISHAY	获取价格	RES,SMT,THIN FILM,1K OHMS,100WV,1% +/-TOL,-50,50PPM TC,0202 CASE

与WSF512K32-29H2M相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

8
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

WSF512K32-29H2M

WSF512K32-29H2M 数据手册

与WSF512K32-29H2M相关器件

与WSF512K32-29H2M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

WSF512K32-29H2M

WSF512K32-29H2M 数据手册

与WSF512K32-29H2M相关器件

与WSF512K32-29H2M相关文章

您还可以找

您在本页遇到什么问题？