Datasheet > WS1M8V-100CMA

WS1M8V-100CMA

更新时间： 2023-01-02 16:42:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		静态存储器
页数	文件大小	规格书
5页	138K
描述
Standard SRAM, 1MX8, 100ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WS1M8V-100CMA 数据手册

WS1M8V-XCX

2x512Kx8 DUALITHIC™ SRAM ADVANCED*

FEATURES

■ Access Times 70, 85, 100ns

PIN CONFIGURATION FOR WS1M8V-XCX

■ Evolutionary, Corner Power/Ground Pinout

■ Packaging:

32 DIP

TOP VIEW

A18

A16

A14

A12

• 32 pin, Hermetic Ceramic DIP (Package 300)

■ Organized as two banks of 512Kx8

■ Commercial, Industrial and Military Temperature Ranges

■ 3.3V Power Supply

31 A15

30 A17

29 WE

28 A13

27 A8

26 A9

■ Low Power CMOS

25 A11

24 CS2

23 A10

22 CS1

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

■ TTL Compatible Inputs and Outputs

■ Output Enable Internally tied to GND.

This data sheet describes a product that may or may not be under

I/O0

I/O1

I/O2

GND

development and is subject to change or cancellation without notice.

PIN DESCRIPTION

A0-18

Address Inputs

Data Input/Output

Chip Selects

I/O0-7

CS1-2

Write Enable

VCC

+3.3V Power Supply

Ground

GND

BLOCK DIAGRAM

I/O0-7

0-18

512K x 8

CS1⁽¹⁾

CS2⁽¹⁾

NOTE:

1. CS¹and CS2 are used to select the lower and upper 512Kx8 of the

device. CS1 and CS2 must not be enabled at the same time.

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

February 2000 Rev. 2

12 3 4 5

中文翻译

下载PDF

与WS1M8V-100CMA相关器件

型号	品牌	获取价格	描述	数据表
WS1M8V-17CC	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-17CCA	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-17CI	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-17CIA	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-17CM	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-17CMA	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-20CC	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-20CCA	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-20CI	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM
WS1M8V-20CIA	WEDC	获取价格	2x512Kx8 DUALITHICTM SRAM