是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.7 |
最长访问时间: | 45 ns | JESD-30 代码: | R-CDIP-T32 |
JESD-609代码: | e0 | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 1MX8 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子节距: | 2.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS1M8V-45CIA | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-45CM | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-45CMA | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-55CC | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-55CCA | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-55CI | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-55CIA | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-55CM | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-55CMA | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM |
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WS1M8V-70CCA | MICROSEMI |
获取价格 |
Standard SRAM, 1MX8, 70ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE |
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