是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.7 |
最长访问时间: | 85 ns | JESD-30 代码: | R-CDIP-T32 |
JESD-609代码: | e4 | 长度: | 42.2 mm |
内存密度: | 8388608 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | GOLD | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS1M8V-85CIA | MICROSEMI |
获取价格 |
Standard SRAM, 1MX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE | |
WS1M8V-85CM | MICROSEMI |
获取价格 |
Standard SRAM, 1MX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE | |
WS1M8V-85CMA | MICROSEMI |
获取价格 |
Standard SRAM, 1MX8, 85ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, HERMETIC SEALED, SIDE | |
WS1M8V-XCX | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM | |
WS1M8-XCX | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM | |
WS1M8-XDJX | ETC |
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SRAM MCP | |
WS1M8-XFX | ETC |
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SRAM MCP | |
WS1M8-XXX | WEDC |
获取价格 |
2x512Kx8 DUALITHICTM SRAM | |
WS1N2-704H | KYOCERA AVX |
获取价格 |
Solder-In EMI Filters | |
WS1N2B704H | KYOCERA AVX |
获取价格 |
Solder-In EMI Filters |