Datasheet > 存储 > SRAM> WS1M8V-20CC

WS1M8V-20CC

更新时间： 2024-02-29 06:54:26

品牌	Logo	应用领域
WEDC		静态存储器
页数	文件大小	规格书
5页	264K
描述
2x512Kx8 DUALITHICTM SRAM

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中文翻译

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数据手册

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WS1M8V-20CC 数据手册

WS1M8V-XCX

White Electronic Designs

ADVANCED*

2x512Kx8 DUALITHIC™ SRAM

PIN CONFIGURATION FOR WS1M8V-XCX

FEATURES

■

Access Times 17, 20, 25, 35, 45, 55ns

32 DIP

TOP VIEW

Evolutionary, Corner Power/Ground Pinout

Packaging:

• 32 pin, Hermetic Ceramic DIP (Package 300)

Organized as two banks of 512Kx8

A18

A16

A14

A12

I/O0

I/O1

I/O2

GND

VCC

31 A15

30 A17

29 WE#

28 A13

27 A8

■

Commercial, Industrial and Military Temperature

Ranges

26 A9

■

3.3V Power Supply

25 A11

24 CS2#

23 A10

22 CS1#

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

Low Power CMOS

TTL Compatible Inputs and Outputs

Output Enable Internally tied to GND.

* This product is under development, is not qualiﬁed or characterized and is subject to

change or cancellation without notice.

PIN DESCRIPTION

A0-18

Address Inputs

Data Input/Output

Chip Selects

I/O0-7

CS#1-2

WE#

Write Enable

V_CC

GND

+3.3V Power Supply

Ground

BLOCK DIAGRAM

I/O0-7

WE#

A0-18

512K x 8

(1)

CS1#

CS2#

NOTE:

1. CS#₁and CS#₂are used to select the lower and upper 512Kx8 of the

device. CS#₁and CS#₂must not be enabled at the same time.

White Electronic Designs Corp. reserves the right to change products or speciﬁcations without notice.

October, 2002

Rev. 2

White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

12 3 4 5

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