是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 1.68 |
其他特性: | NON INDUCTIVE | JESD-609代码: | e3 |
安装特点: | THROUGH HOLE MOUNT | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装形状: | TUBULAR PACKAGE | 包装方法: | TR, 11 INCH |
额定功率耗散 (P): | 5 W | 额定温度: | 70 °C |
电阻: | 0.5 Ω | 电阻器类型: | FIXED RESISTOR |
表面贴装: | NO | 技术: | WIRE WOUND |
温度系数: | 90 ppm/ °C | 端子面层: | Tin (Sn) |
端子形状: | WIRE | 容差: | 1% |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WNER50FE-T | OHMITE |
获取价格 |
Fixed Resistor, Wire Wound, 5W, 0.5ohm, 1% +/-Tol, 90ppm/Cel, Through Hole Mount, AXIAL LE | |
WNET-SERIES | ETC |
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Interface IC | |
WNM02143DN | WILLSEMI |
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MOSFET | |
WNM03301D | WILLSEMI |
获取价格 |
MOSFET | |
WNM03330DN | WILLSEMI |
获取价格 |
MOSFET | |
WNM2016 | TYSEMI |
获取价格 |
N-Channel, 20V, 3.2A, Power MOSFET Excellent ON resistance for higher DC current | |
WNM2016-3 | TYSEMI |
获取价格 |
N-Channel, 20V, 3.2A, Power MOSFET Excellent ON resistance for higher DC current | |
WNM2016-3/TR | VBSEMI |
获取价格 |
N-Channel 20 V (D-S) MOSFET | |
WNM2016-3TR | VBSEMI |
获取价格 |
N-Channel 20 V (D-S) MOSFET | |
WNM2016-3TR | TYSEMI |
获取价格 |
N-Channel, 20V, 3.2A, Power MOSFET Excellent ON resistance for higher DC current |