Datasheet > WNM2025-3

WNM2025-3

更新时间： 2024-02-20 03:23:47

品牌	Logo	应用领域
TYSEMI		电池
页数	文件大小	规格书
3页	819K
描述
Single N-Channel, 20V, 3.9 A, Power MOSFET Supper high density cell design

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WNM2025-3 数据手册

Product specification

WNM2025

Single N-Channel, 20V, 3.9 A, Power MOSFET

V_DS(V)

Rds(on) (Ω)

0.027@ V_GS=4.5V

0.031@ V_GS=2.5V

0.036@ V_GS=1.8V

SOT-23-3L

Descriptions

The WNM2025 is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_{DS (ON)}

with low gate charge. This device is suitable for use in

DC-DC conversion, power switch and charging circuit.

Standard Product WNM2025 is Pb-free.

Pin configuration (Top view)

Features

Trench Technology

W25*

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23-3L

W25= Device Code

= Month (A~Z)

Marking

Applications

Order information

Device

Package

Shipping

Driver for Relay, Solenoid, Motor, LED etc.

WNM2025-3/TR SOT-23-3L 3000/Reel&Tape

DC-DC converter circuit

Power Switch

Load Switch

Charging

http://www.twtysemi.com

sales@twtysemi.com

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