Datasheet > WNM2016-3

WNM2016-3

更新时间： 2022-03-25 19:15:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	165K
描述
N-Channel, 20V, 3.2A, Power MOSFET Excellent ON resistance for higher DC current

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WNM2016-3 数据手册

Product specification

WNM2016

N-Channel, 20V, 3.2A, Power MOSFET

V_(BR)DSS

Rds(on)

40 @ 4.5V

47 @ 2.5V

55 @ 1.8V

SOT-23

Descriptions

The WNM2016 is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench technology

and design to provide excellent R_{DS (ON)}with low gate

charge. This device is suitable for use in DC-DC

conversion and power switch applications. Standard

Product WNM2016 is Pb-free.

Configuration (Top View)

Features

Trench Technology

WT6*

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23

WT6

= Device Code

= Month (A~Z)

Marking

Applications

Order Information

Device

WNM2016-3/TR

Package

SOT-23

Shipping

3000/Tape&Reel

Driver for Relay, Solenoid, Motor, LED etc.

DC-DC converter circuit

Power Switch

Load Switch

http://www.twtysemi.com

sales@twtysemi.com

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