Datasheet > WNM2020-3TR

WNM2020-3TR

更新时间： 2024-01-05 02:26:22

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微碧 - VBSEMI		/
页数	文件大小	规格书
9页	1051K
描述
N-Channel 20 V (D-S) MOSFET

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WNM2020-3TR 数据手册

WNM2020-3/TR

www.VBsemi.tw

N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^e

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

6^a

0.028 at V_GS= 4.5 V

0.042 at V_GS= 2.5 V

0.050 at V_GS= 1.8 V

•

6^a

8.8 nC

• Compliant to RoHS Directive 2002/95/EC

5.6

APPLICATIONS

•

DC/DC Converters

•

Load Switch for Portable Applications

SOT-23

Top View

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

6^a

T_C= 25 °C

_C= 70 °C

_A= 25 °C

5.1

Continuous Drain Current (T_J= 150 °C)

I_D

5^{b, c}

4^{b, c}

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

1.75

1.04^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

T_C= 25 °C

T_C= 70 °C

2.1

1.3

1.25^{b, c}

Maximum Power Dissipation

P_D

T_A= 25 °C

0.8^{b, c}

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

100

Unit

Maximum Junction-to-Ambient^{b, d}

t ≤ 5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

e. Based on T_C= 25 °C.

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