Datasheet > WNM3008

WNM3008

更新时间： 2024-09-23 12:47:23

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	176K
描述
Single N-Channel, 30V, 3.1A, Power MOSFET Excellent ON resistance for higher DC current

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WNM3008 数据手册

Product specification

WNM3008

Single N-Channel, 30V, 3.1A, Power MOSFET

V_DS(V)

Rds(on) (ȍ)

0.044@ V_GS=10V

0.057@ V_GS=4.5V

SOT-23

Descriptions

The WNM3008 is N-Channel enhancement

MOS Field Effect Transistor. Uses advanced trench

technology and design to provide excellent R_{DS (ON)}

with low gate charge. This device is suitable for use

in DC-DC conversion, power switch and charging

circuit. Standard Product WNM3008 is Pb-free.

Pin configuration (Top view)

Features

Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23

W38*

W38

= Device Code

= Month

Applications

Marking

Driver for Relay, Solenoid, Motor, LED etc.

Order information

DC-DC converter circuit

Power Switch

Load Switch

Device

Package

Shipping

3000/Reel&Tape

WNM3008-3/TR

SOT-23

Charging

http://www.twtysemi.com

sales@twtysemi.com

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