Datasheet > WCMA4016U4X

WCMA4016U4X

更新时间： 2022-09-11 11:37:46

品牌	Logo	应用领域
韦达 - WEIDA		/
页数	文件大小	规格书
12页	220K
描述
256K x 16 Static RAM

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WCMA4016U4X 数据手册

WCMA4016U4X

AC Test Loads and Waveforms

ALL INPUT PULSES

90%

Typ

OUTPUT

90%

10%

GND

30 pF

Rise TIme: 1 V/ns

Fall Time: 1 V/ns

INCLUDING

JIG AND

SCOPE

Equivalent to:

THÉVENIN EQUIVALENT

OUTPUT

Parameters

3.0V

Unit

1.105

1.550

0.645

1.75V

KOhms

Volts

R_TH

V_TH

Data Retention Characteristics (Over the Operating Range)

Parameter

V_DR

Description

Conditions

Min.

Typ.^[4]

Max.

Unit

V_CCfor Data Retention

1.5

V_ccmax

V_CC= 1.5V

CE > V_CC– 0.2V,

V_IN> V_CC– 0.2V or V_IN< 0.2V

I_CCDR

Data Retention Current

µA

[5]

t_CDR

Chip Deselect to Data

Retention Time

[6]

t_R

Operation Recovery Time

t_RC

[7]

Data Retention Waveform

DATA RETENTION MODE

> 1.5 V

V_CC(min)

CDR

CE or

BHE.BLE

Note:

6. Full Device AC operation requires linear V_CCramp from V_DRto V_CC(min.)> 100µs or stable at V_CC(min.)>100 µs.

7. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.

1 2 345 6 7...12

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