Datasheet > WCMA4016U4X

WCMA4016U4X

更新时间： 2024-01-02 06:10:05

品牌	Logo	应用领域
韦达 - WEIDA		/
页数	文件大小	规格书
12页	220K
描述
256K x 16 Static RAM

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WCMA4016U4X 数据手册

WCMA4016U4X

Param-

eter

Description

Test Conditions

Min.

Typ.^[4]

Max.

Unit

V_OH

V_OL

V_IH

V_IL

Output HIGH Voltage I_OH= –1.0 mA

Output LOW Voltage I_OL= 2.1mA

Input HIGH Voltage

V_CC= 2.7V

2.4

0.4

V_CC+ 0.3V

0.8

2.2

–0.3

–1

Input LOW Voltage

I_IX

Input Leakage Cur-

rent

GND < V_I< V_CC

µA

I_OZ

Output Leakage Cur- GND < V_O< V_CC, Output Disabled

rent

–1

µA

f = f_MAX= 1/t_RC

f = 1 MHz

V_CC= 3.3V

I_OUT= 0 mA

CMOS Levels

V_CCOperating Supply

Current

I_CC

1.5

Automatic CE

CE > V_CC– 0.2V

Power-Down Cur-

rent— CMOS Inputs

_IN> V_CC– 0.2V or V_IN< 0.2V,

I_SB1

f = f_max(Address and Data Only),

f=0 (OE,WE,BHE and BLE)

µA

Automatic CE

Power-Down Cur-

rent— CMOS Inputs

CE > V_CC– 0.2V

V_IN> V_CC– 0.2V or V_IN< 0.2V,

f = 0, Vcc=3.3V

I_SB2

Capacitance^[5]

Parameter

Description

Input Capacitance

Output Capacitance

Test Conditions

Max.

Unit

C_IN

T_A= 25°C, f = 1 MHz,

V_CC= V_CC(typ.)

C_OUT

Thermal Resistance

Description

Test Conditions

Symbol

BGA

Units

Thermal Resistance

Still Air, soldered on a 4.25 x 1.125 inch, 4-layer

printed circuit board

Θ_JA

°C/W

(Junction to Ambient)^[5]

Thermal Resistance

(Junction to Case)^[5]

Θ_JC

°C/W

Note:

5. Tested initially and after any design or process changes that may affect these parameters.

1 234 5 6 7...12

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