Datasheet > W29C102P-70B

W29C102P-70B

更新时间： 2024-11-08 03:17:55

品牌	Logo	应用领域
华邦 - WINBOND		/
页数	文件大小	规格书
21页	253K
描述
64K 16 CMOS FLASH MEMORY

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数据手册

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W29C102P-70B 数据手册

W29C102

64K ´ 16 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29C102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K ´ 16 bits. The

device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

not required. The unique cell architecture of the W29C102 results in fast program/erase operations

with extremely low current consumption (compared to other comparable 5-volt flash memory

products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

· Single 5-volt program and erase operations

· Fast page-write operations

· Low power consumption

- Active current: 25 mA (typ.)

- Standby current: 20 mA (typ.)

- 128 words per page

· Automatic program timing with internal VPP

generation

- Page program cycle: 10 mS (max.)

- Effective word-program cycle time: 39 mS

- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Read access time: 70/90/120 nS

· Typical page program/erase cycles: 1K/10K

· Ten-year data retention

· End of program detection

- Toggle bit

- Data polling

· Latched address and data

· TTL compatible I/O

· JEDEC standard word-wide pinouts

· Software and hardware data protection

· Available packages: 40-pin 600 mil DIP, TSOP

and 44-pin PLCC

Publication Release Date: March 1998

- 1 -

Revision A3

12 3 4 5 6 7...21

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