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W29D040C-55C PDF预览

W29D040C-55C

更新时间: 2024-09-20 07:11:47
品牌 Logo 应用领域
华邦 - WINBOND 光电二极管
页数 文件大小 规格书
40页 280K
描述
Flash, 512KX8, 55ns, PDIP32, PLASTIC, DIP-32

W29D040C-55C 数据手册

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W29D040C  
512K x 8 CMOS FLASH MEMORY  
GENERAL DESCRIPTION  
The W29D040C is an 4Mbit, 5-volt only CMOS flash memory organized as 512K ´ 8 bits. For flexible  
erase capability, the 4 Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide (´ 8)  
data appears on DQ7- DQ0. The device can be programmed and erased in-system with a standard 5V  
power supply. A 12-volt VPP is not required. The unique cell architecture of the W29D040C results in fast  
program/erase operations with extremely low current consumption (compared to other comparable 5-volt  
flash memory products). The device can also be programmed and erased by using standard EPROM  
programmers.  
FEATURES  
· Single 5-volt write (program and erase)  
operations  
· Typical program/erase cycles:  
- 10K/100K  
· Fast byte-write operation  
· Twenty-year data retention  
- Chip programming cycle: 20 S (typ.)  
- Chip erase cycle: 1 S (typ.)  
· Sector erase architecture  
· Low power consumption  
- Active current: 30 mA (typ.)  
- Standby current: 1 mA (typ.)  
· End of program detection  
- 8 uniform sectors of 64K bytes each  
- Any combination of sectors can be erased  
- Supports full chip erase  
- Software method: Toggle bit/Data polling  
· TTL compatible I/O  
· JEDEC standard byte-wide pinouts  
· Sector protection  
· Available packages: 32-pin PLCC, 32-pin  
TSOP and 32-pin PDIP  
- Sectors can be locked via programmer  
· Read access time: 55/70 ns  
Publication Release Date: January 1999  
- 1 -  
Revision A1  

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