是否无铅: | 不含铅 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-XUFM-P16 | Reach Compliance Code: | unknown |
风险等级: | 5.66 | Is Samacsys: | N |
其他特性: | UL REGISTERED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 140 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | JESD-30 代码: | R-XUFM-P16 |
JESD-609代码: | e4 | 元件数量: | 1 |
端子数量: | 16 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Gold (Au) - with Nickel (Ni) barrier |
端子形式: | PIN/PEG | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VUB120-12NO2TL | IXYS |
获取价格 |
暂无描述 | |
VUB120-16IO1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, | |
VUB120-16NO1 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB120-16NO2 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB120-16NOX | LITTELFUSE |
获取价格 |
三相桥加制动装置系列配有各种功率等级的IGBT和续流二极管。 | |
VUB120-16NOXT | IXYS |
获取价格 |
Bridge Rectifier Diode, 188A, 1600V V(RRM), | |
VUB120-16NOXT | LITTELFUSE |
获取价格 |
三相桥加制动装置系列配有各种功率等级的IGBT和续流二极管。 | |
VUB135-22NO1 | IXYS |
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Insulated Gate Bipolar Transistor, 113A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, M | |
VUB135-22NO1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 113A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, M | |
VUB145 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System |