是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X11 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 其他特性: | UL RECOGNIZED |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 113 A |
集电极-发射极最大电压: | 1700 V | 配置: | SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR |
JESD-30 代码: | R-XUFM-X11 | JESD-609代码: | e4 |
元件数量: | 1 | 端子数量: | 11 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Gold (Au) - with Nickel (Ni) barrier | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 1080 ns | 标称接通时间 (ton): | 320 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VUB145 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB145-16NO1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 141A I(C), 1200V V(BR)CES, N-Channel, MODULE-19 | |
VUB145-16NOXT | LITTELFUSE |
获取价格 |
三相桥加制动装置系列配有各种功率等级的IGBT和续流二极管。 | |
VUB160-12NO1 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-12NO2 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-12NO2TL | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, | |
VUB160-16NO1 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-16NO2 | IXYS |
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Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-16NO2T | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 177A I(C), 1200V V(BR)CES, N-Channel, MODULE-17 | |
VUB160-16NO2TL | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 177A I(C), 1600V V(BR)CES, N-Channel, |