5秒后页面跳转
VUB50-16PO1 PDF预览

VUB50-16PO1

更新时间: 2024-01-15 05:55:01
品牌 Logo 应用领域
IXYS 局域网电动机控制晶体管
页数 文件大小 规格书
2页 83K
描述
Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-9

VUB50-16PO1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ECOPAC-9针数:9
Reach Compliance Code:compliant风险等级:5.81
外壳连接:ISOLATED最大集电极电流 (IC):18 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
JESD-30 代码:R-XUFM-X9元件数量:1
端子数量:9最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):350 ns标称接通时间 (ton):90 ns
Base Number Matches:1

VUB50-16PO1 数据手册

 浏览型号VUB50-16PO1的Datasheet PDF文件第2页 
Advanced Technical Information  
VUB 50  
VRRM = 1200/1600 V  
IdAVM = 56 A  
Three Phase Rectifier Bridge  
with IGBT and Fast Recovery Diode  
for Braking System in ECO-PAC 2  
V16  
A4  
VRRM  
Type  
D
V
D1  
D2  
D3  
D4  
D5  
N7  
1200  
1600  
VUB 50-12 PO1  
VUB 50-16 PO1  
K1  
D1  
G1  
T
D6  
X18  
L9  
R9  
Features  
Input Rectifier D1 - D6  
• three phase mainrectifier  
• brake chopper:  
IGBT with low saturation voltage  
PerFREDTM free wheeling diode  
• me package:  
- high level of integration  
- solder terminals for PCB mounting  
- isolated DCB ceramic base plate  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
1200/1600  
V
IFAV  
IDAVM  
IFSM  
TC = 100°C; sine 180°  
22  
56  
300  
A
A
TC = 100°C; rectangular; d = 1/3; bridge  
TVJ = 25°C; t = 10 ms; sine 50 Hz  
Ptot  
TC = 25°C  
90  
Applications  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
m. typ. max.  
drives with  
• mains input  
• DC link  
• inverter or chopper feeding the machine  
• motor and generator/brake operation  
VF  
IR  
IF = 45 A;  
VR = VRRM  
TVJ = 25°C  
TVJ = 125°C  
1.3  
.2  
1.6  
V
V
;
TVJ = 25°C  
0.2 mA  
mA  
VR = 0.8VRRM; TVJ = 125°C  
0.4  
1.8  
RthJC  
RthJH  
per diode; rectangular 120°  
with heat transfer paste  
1.45 K/W  
K/W  
Chopper Diode D  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
TVJ = 25°C to C  
1200  
V
IF25  
IF80  
DC; = 25°C  
C; TC 80°C  
15  
10  
A
A
Symbol  
Conons  
Characteristic Values  
min. typ. max.  
VF  
IR  
IF = 10 A; TVJ = 25°C  
TVJ = 125°C  
2.6  
1.9  
3.0  
V
V
VR = VRRM  
;
TVJ = 25°C  
TVJ = 125°C  
0.06 mA  
mA  
0.06  
IRM  
trr  
IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C  
VR = 600 V  
13  
110  
A
ns  
RthJC  
RthJH  
3.5 K/W  
K/W  
with heat transfer paste  
5
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2002 IXYS All rights reserved  
1 - 2  

与VUB50-16PO1相关器件

型号 品牌 描述 获取价格 数据表
VUB51-12NO1 IXYS Bridge Rectifier Diode, 3 Phase, 70A, 1200V V(RRM), Silicon,

获取价格

VUB51-16NO1 IXYS Bridge Rectifier Diode, 3 Phase, 70A, 1600V V(RRM), Silicon,

获取价格

VUB60 IXYS Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

获取价格

VUB60-12NO1 IXYS Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

获取价格

VUB60-16IO1 IXYS Insulated Gate Bipolar Transistor

获取价格

VUB60-16NO1 IXYS Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

获取价格