生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-P16 |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
JESD-30 代码: | R-PUFM-P16 | 端子数量: | 16 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | UPPER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VUB160-12NO2 | IXYS |
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Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-12NO2TL | IXYS |
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Insulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel, | |
VUB160-16NO1 | IXYS |
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Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-16NO2 | IXYS |
获取价格 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System | |
VUB160-16NO2T | IXYS |
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Insulated Gate Bipolar Transistor, 177A I(C), 1200V V(BR)CES, N-Channel, MODULE-17 | |
VUB160-16NO2TL | IXYS |
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Insulated Gate Bipolar Transistor, 177A I(C), 1600V V(BR)CES, N-Channel, | |
VUB160-16NOX | LITTELFUSE |
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三相桥加制动装置系列配有各种功率等级的IGBT和续流二极管。 | |
VUB160-16NOXT | LITTELFUSE |
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三相桥加制动装置系列配有各种功率等级的IGBT和续流二极管。 | |
VUB50-16PO1 | IXYS |
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Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel, ECOPAC-9 | |
VUB51-12NO1 | IXYS |
获取价格 |
Bridge Rectifier Diode, 3 Phase, 70A, 1200V V(RRM), Silicon, |