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VUC25-14GO2 PDF预览

VUC25-14GO2

更新时间: 2024-11-04 22:15:15
品牌 Logo 应用领域
IXYS 栅极三相整流桥触发装置可控硅整流器局域网
页数 文件大小 规格书
2页 46K
描述
Three Phase Rectifier Bridge

VUC25-14GO2 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:MODULE包装说明:MODULE-8
针数:8Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.81
Is Samacsys:N其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN THREE PHASE RECTIFIER DIODE BRIDGE
最大直流栅极触发电流:80 mAJESD-30 代码:R-XUFM-X8
JESD-609代码:e4元件数量:1
端子数量:8最高工作温度:125 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:40.82 A
断态重复峰值电压:1400 V重复峰值反向电压:1400 V
表面贴装:NO端子面层:Silver (Ag)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

VUC25-14GO2 数据手册

 浏览型号VUC25-14GO2的Datasheet PDF文件第2页 
VUC 25  
IdAVM = 28 A  
ITAVM = 26 A  
VRRM = 1200-1600 V  
Three Phase  
Rectifier Bridge  
with Fast Diodes and "Softstart" Thyristor  
4
3
2
4
8
1
VRSM  
VDSM  
VRRM  
VDRM  
Type  
7
6
2
5
V
V
1
6
7
1300  
1500  
1700  
1200  
1400  
1600  
VUC 25-12go2  
VUC 25-14go2  
VUC 25-16go2  
3
5
8
Features  
Symbol  
Test Conditions  
Maximum Ratings  
Diode Thyristor  
PackagewithDCBceramicbaseplate  
Isolation voltage 3600 V~  
Planar passivated chips  
IdAV  
IdAVM  
ITAVM  
TK = 85°C; module  
module  
TK = 85°C; (DC)  
25  
28  
-
-
-
26  
A
A
A
Fast recovery diodes to reduce EMI  
Separate thyristor for softstart  
Solderable terminals  
IFSM, ITSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine 300  
t = 8.3 ms (60 Hz), sine 330  
330  
370  
A
A
UL registered E 72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine 270  
t = 8.3 ms (60 Hz), sine 300  
300  
330  
A
A
Applications  
Input rectifier for switching power  
supplies (SMPS)  
Softstart capacitor charging  
Electric drives and auxiliaries  
I2t  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine 450  
t = 8.3 ms (60 Hz), sine 460  
545  
575  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine 365  
t = 8.3 ms (60 Hz), sine 380  
450  
460  
A2s  
A2s  
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling  
Up to 10 dB lower EMI/RFI  
compared to standard rectifier  
(di/dt)cr  
TVJ = TVJM  
repetitive, IT = 50 A  
150  
A/ms  
f =400 Hz, tP =200 ms  
VD = 2/3 VDRM  
IG = 0.3 A,  
non repetitive, IT = ITAVM  
500  
200  
A/ms  
V/ms  
diG/dt = 0.3 A/ms  
(dv/dt)cr  
TVJ = TVJM; VDR = 2/3 VDRM  
RGK = ¥; method 1 (linear voltage rise)  
Dimensions in mm (1 mm = 0.0394")  
VRGM  
PGM  
10  
10  
V
TVJ = TVJM  
IT = ITAVM  
tp = 30 ms  
tp = 10 ms  
£
£
W
1
0.5  
W
W
PGAVM  
TVJ  
TVJM  
Tstg  
-40...+125  
125  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
IISOL £ 1 mA  
Md  
Mounting torque  
typ.  
(M5)  
(10-32 UNF)  
2-2.5  
18-22  
28  
Nm  
lb.in.  
g
Weight  
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 2  

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