Datasheet > VSSB410S-M3

VSSB410S-M3

更新时间： 2024-11-06 01:25:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	94K
描述
Ideal for automated placement

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VSSB410S-M3 数据手册

VSSB410S-M3

Vishay General Semiconductor

www.vishay.com

Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES

• Low profile package

TMBS^®

• Ideal for automated placement

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

DO-214AA (SMB)

TYPICAL APPLICATIONS

For use in low voltage, high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

4.0 A

100 V

V_RRM

MECHANICAL DATA

I_FSM

80 A

Case: DO-214AA (SMB)

E_AS

50 mJ

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - RoHS-compliant, commercial grade

V_Fat I_F= 4.0 A

T_Jmax.

0.61 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

Package

Diode variation

DO-214AA (SMB)

Single die

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VSSB410S

V4B

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

100

(1)

I_F

4.0

1.9

Maximum DC forward current

(2)

I_F

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

Non-repetitive avalanche energy

at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C

I_RRM

1.0

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Notes

(1)

Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 P.C.B.

Free air, mounted on recommended copper pad area

(2)

Revision: 09-Dec-13

Document Number: 89933

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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