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VS-SC200FA120

更新时间： 2024-11-18 17:15:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 169K
描述
SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 200 A

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VS-SC200FA120 数据手册

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VS-SC200FA120  
Vishay Semiconductors  
www.vishay.com  
SOT-227 Silicon Carbide Schottky Barrier Diode,  
1200 V, 200 A  
FEATURES  
• Virtually no recovery tail and no switching  
losses  
• Majority carrier diode using Schottky  
technology on SiC wide band gap material  
• Improved VF and efficiency by thin wafer technology  
• High speed switching, low switching losses  
• Positive temperature coefficient, for easy paralleling  
SOT-227  
• Electrically isolated base plate  
• Large creepage distance between terminal  
• Simplified mechanical designs, rapid assembly  
PRIMARY CHARACTERISTICS  
• Designed and qualified for industrial level  
• UL approved file E78996  
VR  
1200 V  
VF (typical) at 100 A, per diode  
1.45 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
QC (typical), per diode  
553 nC  
200 A  
I
F(DC) per module at TC = 130 °C  
Type  
Modules - diode, SiC Schottky  
SOT-227  
DESCRIPTION / APPLICATIONS  
Package  
Wide band gap SiC based 1200 V Schottky diode, designed  
for high performance and ruggedness.  
Two separate diodes,  
parallel pin-out  
Circuit configuration  
Optimum choice for high speed hard switching and efficient  
operation over a wide temperature range, it is also  
recommended for all applications suffering from Silicon  
ultrafast recovery behavior.  
Typical applications include AC/DC PFC and DC/DC ultra  
high frequency output rectification in FBPS and LLC  
converters  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
TC = 130 °C  
MAX.  
1200  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
100  
A
IFSM  
TJ = 25 °C, 6 ms square pulse  
TC = 130 °C  
620  
PD  
409  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 min  
2500  
Operating junction and storage temperature range  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
UNITS  
Cathode to anode breakdown voltage  
VBR  
IR = 100 μA  
1200  
-
IF = 100 A  
-
-
-
-
-
-
1.45  
1.86  
6.85  
23.81  
34.66  
342  
1.61  
V
Forward voltage  
VFM  
IF = 100 A, TJ = 150 °C  
VR = 1200 V  
-
300  
Reverse leakage current  
Junction capacitance  
IRM  
CT  
TJ = 125 °C, VR = 1200 V  
TJ = 150 °C, VR = 1200 V  
VR = 1200 V, f = 1 MHz  
-
-
-
μA  
pF  
Revision: 15-Apr-2024  
Document Number: 97150  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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