Datasheet > VS-SC50BA65

VS-SC50BA65

更新时间： 2024-05-23 22:23:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	177K
描述
SOT-227 Silicon Carbide Single Phase Bridge, 50 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-SC50BA65 数据手册

VS-SC50BA65

Vishay Semiconductors

www.vishay.com

SOT-227 Silicon Carbide Single Phase Bridge, 50 A

FEATURES

• Virtually no recovery tail and no switching

losses

• Majority carrier diode using Schottky

technology on SiC wide band gap material

• Improved V_Fand efficiency by thin wafer technology

• High speed switching, low switching losses

• Positive temperature coefficient, for easy paralleling

SOT-227

• Electrically isolated base plate

• Large creepage distance between terminal

LINKS TO ADDITIONAL RESOURCES

• Simplified mechanical designs, rapid assembly

• Designed and qualified for industrial level

• UL approved file E78996

Application

Notes

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

DESCRIPTION / APPLICATIONS

I_Oat T_C= 124 °C

50 A

650 V

V_RRM

Wide band gap SiC based 650 V Schottky diode, designed

for high performance and ruggedness.

_FMat 50 A, T_C= 25 °C

Package

1.5 V

SOT-227

Optimum choice for high speed hard switching and efficient

operation over a wide temperature range, it is also

recommended for all applications suffering from Silicon

ultrafast recovery behavior.

Circuit configuration

Single phase bridge

Typical applications include AC/DC PFC and DC/DC ultra

high frequency output rectification in FBPS and LLC

converters

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

180° rect. conduction angle

I_O

T_C

124

°C

50 Hz

60 Hz

50 Hz

60 Hz

267

I_FSM

I²t

280

358

A²s

327

V_RRM

T_J

650

-40 to +175

°C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V_RRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V_RSM, MAXIMUM NON-REPETITIVE PEAK

TYPE NUMBER

REVERSE VOLTAGE

VS-SC50BA65

650

Revision: 22-Apr-2024

Document Number: 97173

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与VS-SC50BA65相关器件

型号	品牌	获取价格	描述	数据表
VSSC520S	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSC520S	TAYCHIPST	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSC520S-M3	VISHAY	获取价格	Ideal for automated placement
VSSC520S-M3/9AT	VISHAY	获取价格	DIODE 2.2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, P
VSSC520S-M3-57T	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VSSC520S-M3-9AT	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VS-SC80FA120	VISHAY	获取价格	SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 80 A
VS-SC80FA65	VISHAY	获取价格	SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 80 A
VSSC8L45-M3	VISHAY	获取价格	Trench MOS Schottky technology
VSSC8L45-M3/57T	VISHAY	获取价格	DIODE SCHOTTKY 45V 3.8A DO214AB