Datasheet > VS-SC80FA120

VS-SC80FA120

更新时间： 2024-10-15 17:15:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	169K
描述
SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 80 A

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VS-SC80FA120 数据手册

VS-SC80FA120

Vishay Semiconductors

www.vishay.com

SOT-227 Silicon Carbide Schottky Barrier Diode,

1200 V, 80 A

FEATURES

• Virtually no recovery tail and no switching

losses

• Majority carrier diode using Schottky

technology on SiC wide band gap material

• Improved V_Fand efficiency by thin wafer technology

• High speed switching, low switching losses

• Positive temperature coefficient, for easy paralleling

SOT-227

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

PRIMARY CHARACTERISTICS

• Designed and qualified for industrial level

• UL approved file E78996

V_R

1200 V

V_F(typical) at 40 A, per diode

1.40 V

223.5 nC

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Q_C(typical), per diode

_F(DC)per module at T_C= 135 °C

80 A

Type

Modules - diode, SiC Schottky

SOT-227

DESCRIPTION / APPLICATIONS

Package

Wide band gap SiC based 1200 V Schottky diode, designed

for high performance and ruggedness.

Two separate diodes,

parallel pin-out

Circuit configuration

Optimum choice for high speed hard switching and efficient

operation over a wide temperature range, it is also

recommended for all applications suffering from Silicon

ultrafast recovery behavior.

Typical applications include AC/DC PFC and DC/DC ultra

high frequency output rectification in FBPS and LLC

converters

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

T_C= 135 °C

MAX.

1200

UNITS

Cathode to anode voltage

Continuous forward current per diode

Single pulse forward current per diode

Maximum power dissipation per module

RMS isolation voltage

I_F

I_FSM

T_J= 25 °C, 6 ms square pulse

T_C= 135 °C

260

P_D

166

V_ISOL

T_J, T_Stg

Any terminal to case, t = 1 min

2500

Operating junction and storage temperature range

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Cathode to anode breakdown voltage

V_BR

I_R= 100 μA

1200

I_F= 40 A

1.40

1.79

3.1

1.58

Forward voltage

V_FM

I_F= 40 A, T_J= 150 °C

V_R= 1200 V

120

Reverse leakage current

Junction capacitance

I_RM

C_T

T_J= 125 °C, V_R= 1200 V

T_J= 150 °C, V_R= 1200 V

V_R= 1200 V, f = 1 MHz

10.5

15.5

136

μA

Revision: 15-Apr-2024

Document Number: 97147

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-SC80FA120相关器件

型号	品牌	获取价格	描述	数据表
VS-SC80FA65	VISHAY	获取价格	SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 80 A
VSSC8L45-M3	VISHAY	获取价格	Trench MOS Schottky technology
VSSC8L45-M3/57T	VISHAY	获取价格	DIODE SCHOTTKY 45V 3.8A DO214AB
VSSC8L45-M3/9AT	VISHAY	获取价格	DIODE SCHOTTKY 45V 4.9A DO214AB
VSSC8L45-M3_15	VISHAY	获取价格	Surface Mount Trench MOS Barrier Schottky Rectifier
VS-SC90BA65	VISHAY	获取价格	SOT-227 Silicon Carbide Single Phase Bridge, 90 A
VS-SD1053C18S20L	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1050A, 1800V V(RRM), Silicon, DO-200AB,
VS-SD1053C22S20L	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1050A, 2200V V(RRM), Silicon, DO-200AB,
VS-SD1053C24S20L	VISHAY	获取价格	Rectifier Diode,
VS-SD1053C25S20L	VISHAY	获取价格	暂无描述

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